JPH0249061B2 - - Google Patents
Info
- Publication number
- JPH0249061B2 JPH0249061B2 JP53153932A JP15393278A JPH0249061B2 JP H0249061 B2 JPH0249061 B2 JP H0249061B2 JP 53153932 A JP53153932 A JP 53153932A JP 15393278 A JP15393278 A JP 15393278A JP H0249061 B2 JPH0249061 B2 JP H0249061B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- circuit
- muting
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- 230000003321 amplification Effects 0.000 description 15
- 238000003199 nucleic acid amplification method Methods 0.000 description 15
- 230000003071 parasitic effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/34—Muting amplifier when no signal is present
Landscapes
- Control Of Amplification And Gain Control (AREA)
- Amplifiers (AREA)
- Noise Elimination (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15393278A JPS5579512A (en) | 1978-12-12 | 1978-12-12 | Muting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15393278A JPS5579512A (en) | 1978-12-12 | 1978-12-12 | Muting circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5579512A JPS5579512A (en) | 1980-06-16 |
| JPH0249061B2 true JPH0249061B2 (en]) | 1990-10-29 |
Family
ID=15573224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15393278A Granted JPS5579512A (en) | 1978-12-12 | 1978-12-12 | Muting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5579512A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56123111A (en) * | 1980-03-05 | 1981-09-28 | Hitachi Ltd | Muting circuit |
| JPS5850505U (ja) * | 1981-09-29 | 1983-04-05 | 日本ビクター株式会社 | ミユ−テイング駆動回路 |
| JPS58204611A (ja) * | 1982-05-24 | 1983-11-29 | Mitsubishi Electric Corp | 増幅回路 |
-
1978
- 1978-12-12 JP JP15393278A patent/JPS5579512A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5579512A (en) | 1980-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6142888B2 (en]) | ||
| JPH0249061B2 (en]) | ||
| CA2371066A1 (en) | Overvoltage protection | |
| US3968450A (en) | Transistor amplifier | |
| US5545918A (en) | Circuit construction for controlling saturation of a transistor | |
| US6337503B1 (en) | Integrated power circuit with reduced parasitic current flow | |
| JP3262841B2 (ja) | 第１回路接続点を第２あるいは第３の回路接続点に後者の電位に関連して接続し、特に基板の電位に関する集積回路の絶縁領域の電位を制御するための切換回路 | |
| US5155572A (en) | Vertical isolated-collector PNP transistor structure | |
| CA1294676C (en) | Feed forward darlington circuit with reduced npn reverse beta sensitivity | |
| US4583051A (en) | Extended range amplifier circuit | |
| US5694075A (en) | Substrate clamp for non-isolated integrated circuits | |
| JP2908149B2 (ja) | 演算増幅器 | |
| JP3135363B2 (ja) | 半導体集積回路 | |
| JP2825011B2 (ja) | 半導体集積回路装置 | |
| JP2910512B2 (ja) | モノリシック電力増幅集積回路 | |
| JPH0691384B2 (ja) | 半導体集積回路装置 | |
| JPH0786895A (ja) | 出力回路 | |
| JPS6150403B2 (en]) | ||
| JPS6329835B2 (en]) | ||
| JPH0773206B2 (ja) | デジタル入力インタ−フエイス回路 | |
| JPS6212687B2 (en]) | ||
| JPS6197862A (ja) | 半導体装置 | |
| JPH01106605A (ja) | トランジスタ回路 | |
| JPH0331282B2 (en]) | ||
| JPH05275631A (ja) | バイポーラ集積回路装置 |